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d a t a sh eet product speci?cation supersedes data of august 1986 1998 feb 09 discrete semiconductors BLV57 uhf linear push-pull power transistor
1998 feb 09 2 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 features internally matched input for wideband operation and high power gain internal midpoint (r.f. ground) reduces negative feedback and improves power gain increased input and output impedances (compared with single-ended transistors) simplify wideband matching length of the external emitter leads is not critical diffused emitter ballasting resistors for an optimum temperature profile gold metallization ensures excellent reliability. description two n-p-n silicon planar epitaxial transistor sections in one package to be used as push-pull amplifier, primarily intended for use in linear u.h.f. television transmitters and transposers. the package is an 8-lead flange type with a ceramic cap. all leads are isolated from the flange. pinning - sot161a pin symbol description 1 e emitter 2 e emitter 3 c2 collector 2 4 b2 base 2 5 c1 collector 1 6 b1 base 1 7 e emitter 8 e emitter fig.1 simplified outline and symbol. handbook, halfpage mbc826 1 3 5 78 6 4 2 top view quick reference data r.f. performance in linear ampli?er notes 1. three-tone test method (vision carrier - 8 db, sound carrier - 7 db, sideband signal - 16 db), zero db corresponds to peak sync level. 2. power gain compression is 1 db. mode of operation f vision mhz v ce v i c1 =i c2 a i c(zs) a t h c d im (1) db p o sync (1) w p l w g p db class-a 860 25 0,85 - 70 25 - 60 - 55 ? typ. 6 12 - ? typ. 8,0 9,0 class-ab 860 25 1,25 2 0,1 25 -- typ. 38 (2) typ. 6,5 (2) warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo disc is not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste.
1998 feb 09 3 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 ratings limiting values in accordance with the absolute maximum system (iec 134) note 1. dissipation of either transistor section should not exceed half rated dissipation. collector-emitter voltage (peak value); v be =0 v cesm max. 50 v open base v ceo max. 27 v emitter-base voltage (open collector) v ebo max. 3,5 v collector current per transistor section d.c. or average i c ; i c(av) max. 2 a (peak value); f ? 1 mhz i cm max. 4 a total power dissipation at t mb =25 c (1) p tot max. 77 w (1) r.f. power dissipation (f ? 1 mhz); t mb =25 c (1) p rf max. 93 w (1) storage temperature t stg - 65 to + 150 c operating junction temperature t j max. 200 c fig.2 d.c. soar. (1) (1) second breakdown limit (independent of temperature). handbook, halfpage 10 1 mgp358 11010 2 i c1 + i c2 (a) v ce (v) (1) t mb = 25 c t h = 70 c
1998 feb 09 4 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 thermal resistance (dissipation = 42 w; t mb = 80,5 c, i.e. t h =70 c) from junction to mounting base (d.c. dissipation) r th j - mb(dc) = 2,43 k/w from junction to mounting base (r.f. dissipation) r th j - mb(rf) = 1,91 k/w from mounting base to heatsink r th mb - h = 0,25 k/w fig.3 power derating curves vs. temperature. (1) i continuous d.c. (including r.f. class-a) operation ii continuous r.f. operation dissipation of either transistor section should not exceed half rated dissipation. handbook, halfpage 050 t h ( c) 100 100 75 25 0 50 mgp359 p tot (w) ii i
1998 feb 09 5 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 example nominal class-a push-pull operation (without r.f. signal): v ce = 25 v; i c1 =i c2 = 0,85 a; t h =70 c. fig.4 shows: r th j-h max. 2,68 k/w t j max. 184 c typical device: r th j-h typ. 2,28 k/w t j typ. 167 c fig.4 maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (r th mb-h = 0,25 k/w.) handbook, full pagewidth 100 80 3 1.5 02040 mgp360 2.5 2 60 p tot (w) r th j-h (k/w) 75 c 100 c 125 c 150 c 175 c t j = 200 c t h = 120 c 100 c 80 c 60 c 40 c 20 c 0 c
1998 feb 09 6 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 characteristics apply to either transistor section unless otherwise speci?ed t j =25 c notes 1. measured under pulse conditions: t p 300 m s; d 0,02. 2. measured under pulse conditions: t p 50 m s; d 0,01. the graphs apply to either transistor section. collector-emitter breakdown voltage v be = 0; i c = 10 ma v (br)ces ? 50 v open base; i c = 25 ma v (br)ceo ? 27 v emitter-base breakdown voltage open collector; i e = 5 ma v (br)ebo ? 3,5 v collector cut-off current v be = 0; v ce = 27 v i ces 10 ma second breakdown energy; l = 25 mh; f = 50 hz open base e sbo ? 2mj r be =10 w e sbr ? 2mj d.c. current gain (1) ? typ. 15 40 i c = 0,85 a; v ce = 25 v h fe d.c. current gain ratio of transistor sections i c = 0,85 a; v ce = 25 v 0,67 to 1,5 collector-emitter saturation voltage (1) i c = 1,7 a; i b = 0,17 a v cesat typ. 0,75 v transition frequency at f = 100 mhz (2) - i e = 0,85 a; v cb = 25 v f t typ. 2,5 ghz - i e = 1,7 a; v cb = 25 v f t typ. 2,5 ghz collector capacitance at f = 1 mhz typ. 24 30 pf pf i e =i e = 0; v cb = 25 v c c feedback capacitance at f = 1 mhz i c = 50 ma; v ce = 25 v c re typ. 15 pf collector-?ange capacitance c cf typ. 2 pf
1998 feb 09 7 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 fig.5 typical values; v ce = 25 v. handbook, halfpage 2 0.5 1 10 i c (a) 1 10 - 1 10 - 2 mgp361 1.5 v be (v) t h = 70 c 25 c fig.6 typical values; t j =25 c. handbook, halfpage 012 60 20 0 40 mgp362 i c (a) h fe v ce = 25 v 5 v
1998 feb 09 8 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 fig.7 v cb = 25 v; f = 500 mhz; t j =25 c. handbook, halfpage 0123 4 3 1 0 2 mgp363 typ f t (ghz) - i e (a) fig.8 i e =i e = 0; f = 1 mhz; t j =25 c. handbook, halfpage 0 102030 100 75 25 0 50 mgp364 typ c c (pf) v cb (v)
1998 feb 09 9 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 application information r.f. performance in u.h.f. class-a operation (linear push-pull power ampli?er) note 1. three-tone test method (vision carrier - 8 db, sound carrier - 7 db, sideband signal - 16 db), zero db corresponds to peak sync level. f vision (mhz) v ce (v) i c1 =i c2 (a) t h ( c) d im (1) (db) p o sync (1) (w) g p (db) 860 25 0,85 70 - 60 ? 6 ? 8,0 70 - 60 typ. 7,5 typ. 8,5 70 - 55 typ. 10 typ. 8,5 25 - 55 typ. 12 typ. 9,0 fig.9 class-a test circuit at f vision = 860 mhz. h t.u.t. c11 c8 l5 c15 c17 c18 l9 c14 c5 c2 c3 l10 l6 l7 l3 l4 l1 l2 c9 c13 c16 c19 r1 c22 c23 c20 c21 c6 50 w 50 w mgp365 c12 c10 c7 l11 l13 l14 l12 + v cc1 + v bb1 + v bb2 + v cc2 c4 c1 l8
1998 feb 09 10 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 list of components: note 1. atc means american technical ceramics. c1 = c6 = c16 = 4,7 pf (500 v) multilayer ceramic chip capacitor (atc (1) ) c2 = c3 = c20 = c21 = 33 pf multilayer ceramic chip capacitor (cat. no. 2222 851 13339) c4 = c9 = c13 = c19 = 1,2 to 3,5 pf ?lm dielectric trimmer (cat.no. 2222 809 05001) c5 = c7 = c15 = c17 = 100 nf multilayer ceramic chip capacitor (cat. no. 2222 852 59104) c8 = c10 = c11 = c12 = 220 pf multilayer ceramic chip capacitor (cat. no. 2222 852 13221) c14 = c18 = 6,8 m f/40 v solid aluminium electrolytic capacitor c22 = c23 = 1 pf (500 v) multilayer ceramic chip capacitor (atc (1) ) c9 and c13 are placed 8,0 and 14,0 mm from transistor edge, respectively. l1 = l2 = l13 = l14 = 50 w semi-rigid cable; outer diameter 2,2 mm; length 29,0 mm. these cables are soldered on 75 w striplines (1,1 mm 28,0 mm). the centre conductors of the cables l1 and l13 are not connected. l3 = l4 = 52 w stripline (2,0 mm 16,5 mm) l5 = l8 = 470 nh microchoke l6 = l7 = 39 w stripline (3,1 mm 8,0 mm) l9 = l12 = 1 turn cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 3,5 mm l10 = l11 = 39 w stripline (3,1 mm 34,0 mm) l3, l4, l6, l7, l10 and l11 are striplines on a double cu-clad printed-circuit board with ptfe ?bre-glass dielectric ( ? r = 2,74); thickness 1/32. r1 = 10 w carbon resistor
1998 feb 09 11 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 the circuit and the components are on one side of the ptfe fibre-glass board, the other side is unetched copper to serve as a ground-plane. earth connections are made by means of bolts. additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. fig.10 component layout and printed-circuit board for 860 mhz class-a test circuit. handbook, full pagewidth 60 11 64 73 + v bb1 + v cc1 + v cc2 + v bb2 input c14 c15 c11 c8 c5 l1 l2 c1 c3 c2 l5 l3 c4 c9 l6 l7 l11 l10 l12 l9 c13 c16 c19 c20 c22 c21 c17 c18 c12 c10 c7 l8 l4 c6 c23 l14 l13 r1 l10 l11 output mgp366
1998 feb 09 12 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 fig.11 intermodulation distortion (d im ) (1) and power gain as a function of output power. handbook, halfpage 5 101520 - 50 - 70 - 60 mgp367 d im (db) p o sync (w) 10 0 5 g p (db) g p d im fig.12 cross-modulation distortion (d cm ) (2) as a function of output power. handbook, halfpage 01020 30 10 0 20 mgp368 p o sync (w) d cm (%)
1998 feb 09 13 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 conditions for figs 11and 12: typical values; v ce = 25 v; i c =2 0,85 a; - - - t h =25 c; ?? t h =70 c; f vision = 860 mhz. ruggedness in push-pull class-a operation the BLV57 is capable of withstanding full load mismatch (vswr = 50 through all phases) under the following conditions: notes 1. three-tone test method (vision carrier - 8 db, sound carrier - 7 db, sideband signal - 16 db), zero db corresponds to peak sync level. intermodulation distortion of input signal - 70 db. 2. two-tone test method (vision carrier 0 db, sound carrier - 7 db), zero db corresponds to peak sync level. cross-modulation distortion (d cm ) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 db to - 20 db. v ce = 25 v; i c =2 0,85 a; t h =70 c; p o sync (1) 12,5 w; f = 860 mhz; r th mb-h = 0,25 k/w. at any other composition of the output signal: p l (r.m.s. value) 5 w. fig.13 input impedance (series components). handbook, halfpage 400 650 900 6 2 0 4 mgp369 f (mhz) x i r i r i , x i ( w )
1998 feb 09 14 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 fig.14 load impedance (series components). handbook, halfpage 400 650 900 15 5 0 10 mgp370 f (mhz) r l , x l ( w ) r l x l fig.15 handbook, halfpage 400 650 900 15 5 0 10 mgp371 f (mhz) g p (db)
1998 feb 09 15 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 conditions for figs 13, 14 and 15: the graphs apply to either transistor section assuming class-a push-pull operation. typical values; v ce = 25 v; i c = 0,85 a; t h =70 c. application information r.f. performance in u.h.f. class-ab operation (c.w.) note 1. typical values are based on 1 db gain compression. using a 3rd order amplitude transfer characteristic, 1 db compression corresponds with 30% sync input/25% sync output compression in television service (negative modulation, c.c.i.r. system). f vision (mhz) v ce (v) i c(zs) (a) t h ( c) p l (w) i c1 =i c2 (a) h (%) g p (1) (db) 860 25 2 0,1 25 12,5 typ. 7,5 38 typ. 1,25 typ. 60 typ. 6,5 860 25 2 0,1 70 12,5 typ. 7,0 30 typ. 1,10 typ. 55 typ. 6,0 w idth t.u.t. c11 c8 l5 c14 c16 l9 c5 c2 c3 l10 l6 l7 l3 l4 l1 l2 c9 c13 c15 c17 r1 c20 c21 c18 c19 c6 50 w 50 w mgp372 c12 c10 c7 l11 l13 l14 l12 + v cc1 + v bb1 + v bb2 + v cc2 c4 c1 l8 fig.16 class-ab test circuit at f vision = 860 mhz.
1998 feb 09 16 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 list of components: note 1. atc means american technical ceramics. c1 = c6 = c15 = 4,7 pf (500 v) multilayer ceramic chip capacitor (atc (1) ) c2 = c3 = c18 = c19 = 33 pf multilayer ceramic chip capacitor (cat. no. 2222 851 13339) c4 = c9 = c13 = c17 = 1,2 to 3,5 pf ?lm dielectric trimmer (cat. no. 2222 809 05001) c5 = c7 = c14 = c16 = 100 nf multilayer ceramic chip capacitor (cat. no. 2222 852 59104) c8 = c10 = c11 = c12 = 220 pf multilayer ceramic chip capacitor (cat. no. 2222 852 13221) c20 = c21 = 1 pf (500 v) multilayer ceramic chip capacitor (atc (1) ) c9 and c13 are placed 8,0 and 14,0 mm from transistor edge, respectively. l1 = l2 = l13 = l14 = 50 w semi-rigid cable; outer diameter 2,2 mm; length 29,0 mm. these cables are soldered on 75 w striplines (1,1 mm 28,0 mm). the centre conductors of the cables l1 and l13 are not connected. l3 = l4 = 52 w stripline (2,0 mm 16,5 mm) l5 = l8 = 470 nh microchoke l6 = l7 = 39 w stripline (3,1 mm 8,0 mm) l9 = l12 = 1 turn cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 3,5 mm l10 = l11 = 39 w stripline (3,1 mm 34,0 mm) l3, l4, l6, l7, l10 and l11 are striplines on a double cu-clad printed-circuit board with ptfe ?bre-glass dielectric ( ? r = 2,74); thickness 1/32 r1 = 10 w carbon resistor.
1998 feb 09 17 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 the circuit and the components are on one side of the ptfe fibre-glass board, the other side is unetched copper to serve as a ground-plane. earth connections are made by means of bolts. additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. fig.17 component layout and printed-circuit board for 860 mhz class-ab test circuit. handbook, full pagewidth 60 11 64 73 + v bb1 + v cc1 + v cc2 + v bb2 input c14 c11 c8 c5 l1 l2 c1 c3 c2 l5 l3 c4 c9 l6 l7 l11 l10 l12 l9 c13 c15 c17 c18 c20 c19 c16 c12 c10 c7 l8 l4 c6 c21 l14 l13 r1 l10 l11 output mgp373 11
1998 feb 09 18 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 fig.18 typical values; v ce = 25 v; i c(zs) =2 0,1 a; f vision = 860 mhz. handbook, halfpage 0510 60 20 0 40 mgp374 p s (w) p l (w) t h = 25 c 70 c fig.19 typical values; v ce = 25 v; i c(zs) =2 0,1 a; --- t h =25 c; ??? t h =70 c; f vision = 860 mhz. handbook, halfpage 02040 7.5 2.5 0 5 75 25 0 50 mgp375 p l (w) g p (db) h (%) g p h
1998 feb 09 19 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 ruggedness in class-ab operation the BLV57 is capable of withstanding a load mismatch (vswr 2 through all phases) up to 30 w (r.m.s. value) or (vswr 50 through all phases) up to 19 w under the following conditions: v ce = 25 v; t h =70 c; f = 860 mhz; r th mb-h = 0,25 k/w. fig.20 input impedance (series components). handbook, halfpage 400 650 900 6 2 0 4 mgp376 f (mhz) x i r i r i , x i ( w )
1998 feb 09 20 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 fig.21 load impedance (series components). handbook, halfpage 400 650 900 15 5 0 10 mgp377 f (mhz) r l , x l ( w ) x l r l conditions for figs 20; 21 and 22: the graphs apply to either transistor section assuming class-ab push-pull operation. typical values; v ce = 25 v; i c(zs) = 0,1 a; p l = 17,5 w (p.e.p); t h =70 c. fig.22 handbook, halfpage 400 650 900 15 5 0 10 mgp378 f (mhz) g p (db)
1998 feb 09 21 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 package outline references outline version european projection issue date iec jedec eiaj sot161a 97-06-28 0 5 10 mm scale flanged ceramic package; 2 mounting holes; 8 leads sot161a u 2 h d a f a b m w 3 b 1 h 1 m c w 2 w 1 p ab m e q c q u 1 e e 1 c b 8 7 6 5 2 1 4 3 unit a mm d b 2.04 1.77 b 1 2.93 2.66 0.18 0.10 10.22 10.00 e 10.22 10.00 e 3.50 17.00 16.00 10.34 10.08 7.27 6.47 c e 1 u 2 0.26 0.51 1.02 w 3 18.42 qw 2 w 1 f 2.70 2.08 u 1 24.97 24.71 h 1 12.83 12.57 p 3.36 2.92 q 4.32 4.06 3.80 inches 0.080 0.070 0.115 0.105 0.007 0.004 0.402 0.394 0.402 0.394 0.138 0.669 0.630 0.407 0.397 0.286 0.255 0.01 0.02 0.04 0.725 0.106 0.082 0.983 0.973 0.505 0.495 0.132 0.120 0.170 0.160 0.150 h dimensions (millimetre dimensions are derived from the original inch dimensions)
1998 feb 09 22 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1998 feb 09 23 philips semiconductors product speci?cation uhf linear push-pull power transistor BLV57 notes
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